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Information and Communications Technology Qualifications | Back to list of Prescriptions Prescription: BS500 (BS100) Semiconductor Theory Aim of Module To introduce students to semiconductor materials and the principles of semiconductor devices. Credits 14 Student Learning hours 140 Content Revised pre 1996 Prescription Expiry Date Nov 2005 Level and Assessment Schedule Topics Highest Skill Level Suggested Assessment Percentage 1 Semiconductor Materials C 5 2 Diodes C 10 3 Bipolar Transistors C 35 4 Unipolar Transistors C 35 5 Thyrisitors, Diacs, Triacs and Unijunction Transistors C 15 100 The Student Will 1 Semiconductor Materials > The student will understand the atomic structure of semiconductor materials this will include: R 1.1 States the order of resistivities of conductors, insulators and semi-conductors. 1.2 Sketches curves of resistance to base of temperature, for conductors, insulators and semi-conductors. C 1.3 Understands the principles of silicon and germanium semi-conductor materials. 1.4 Explains doping of semi-conductor materials. R 1.5 Identifies p type and n type materials. top 2 Diodes > The student will understand the consruction and characteristics of a diode. This will include: R 2.1 Sketches the construction of a diode and explains that the junction occurs by the fusion of the two materials. 2.2 Draws the circuit symbol for a p-n junction indicating conventional and electron current flow paths. 2.3 Sketches curves of current against forward and reverse bias voltage for a diode. C 2.4 Explains the depletion area and the operation of the diode. top 3 Bipolar Transistors > The student will understand the constuction and characteristics of bi-polar transistors. This will include: R 3.1 Sketches the physical construction of typical n-p-n transistors. 3.2 Identifies a forward biased base-emitter junction. 3.3 Identifies a reverse biased base-collector junction. 3.4 Draws a sketch for basic transistor action to show forward biased base-emitter junction and reverse biased base-collector junction. C 3.5 Describes the transistor action for both a p-n-p and a n-p-n arrangement and their charactesristic family of curves. 3.6 Describes the leakage current effects. R 3.7 Identifies the p-n-p and n-p-n transistor symbols. 3.8 Indicates the correct potential at the collector base and emitter on a sketch of the symbols. C 3.9 Explains the electron current flow paths using the p-n-p and n-p-n transistor symbols. 3.10 Describes how transistors can be connected in the following configurations: -common base -common emitter -common collector (emitter follower) top 4 Unipolar Transistors > The student will understand the construction operation and characteristics of unipolar transistors. This will include: R 4.1 Defining a unipolar transistor. 4.2 Sketching the construction of JFETs and MOSFETs. C 4.3 Describing the operation and the characteristics of enhancement and depletion mode of JFETs and MOSFETs. R 4.4 Producing and correctly labelling the symbols of JFETs and MOSFETs. top 5 Thyrisitors, Diacs, Triacs and Unijunction Transistors > Explain the action of the thyristor, diac, triac and unijunction transistors.This will include: R 5.1 Sketching the characteristic of a thyristor. C 5.2 Explaining the action of a thyristor in terms of the two-transistor model. 5.3 Describing the action of the diac, triac and unijunction transistor. top Note > The characteristics of the devices should be demonstrated by laboratory experiments. | Home | Newsletters | Conference | Qualifications | Forum | Job Vacancies |